Photoresist dissolution into a CO2 compatible salt and CO2 solution: Investigation of Processing Conditions

Amy E. Zweber; Mark Wagner; Ruben G. Carbonell

doi:10.1117/12.712093

23 March 2007 Photoresist dissolution into a CO₂ compatible salt and CO₂ solution: investigation of processing conditions

Amy E. Zweber, Mark Wagner, Ruben G. Carbonell

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Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 651948 (2007) https://doi.org/10.1117/12.712093
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

New lithographic techniques are being implemented to help further reduce feature sizes in microelectronics. A technique for the development of standard extreme ultraviolet (EUV) photoresists in a carbon dioxide compatible salt (CCS) and supercritical carbon dioxide (scCO₂) solution is being investigated to reduce line edge roughness and image collapse of high aspect ratio features.^1,2 To understand the kinetics and overall mechanism of photoresist dissolution into the high pressure CCS/scCO₂ solution, a quartz crystal microbalance (QCM) was previously used to measure the effects of temperature, pressure, and density on the photoresist removal rate.^3,4In this paper, the effects of a CO₂ drying step before development and an adhesive coating on the photoresist removal rate and the formation of residual photoresist droplets were studied at 50°C and 5000 psi. The results implied that neither the CO₂ drying step nor the HMDS coating had an effect on the bulk photoresist removal rate. It was also found that using an HMDS adhesive coating reduces residual photoresist droplet size on the substrate due to the lower substrate / photoresist surface energy.

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Amy E. Zweber, Mark Wagner, and Ruben G. Carbonell "Photoresist dissolution into a CO₂ compatible salt and CO₂ solution: investigation of processing conditions", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651948 (23 March 2007); https://doi.org/10.1117/12.712093

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