Paper
3 May 2007 Assessment of EUV reticle blank availability enabling the use of EUV tools today and in the future
Author Affiliations +
Proceedings Volume 6533, 23rd European Mask and Lithography Conference; 653313 (2007) https://doi.org/10.1117/12.737179
Event: European Mask and Lithography Conference2007, 2007, Grenoble, France
Abstract
With first full-field exposure tools for extreme ultraviolet lithography (EUVL) materializing, the present paper intends to review the status of the EUV mask infrastructure to assure timely availability of reticles, first for the alpha demo tool (ADT), but also in preparation for future use of EUV lithography in production. First, the major requirements such as low thermal expansion substrates, multilayer reflectivity control, flatness requirements and absorber related requirements are reviewed and motivated. In a second part the status of the infrastructure is reviewed, and it is shown that both for mask blank suppliers and mask shops full-field EUV reticles bring new challenges. Because the mask blank infrastructure is critical to the success of EUV lithography, IMEC has addressed blanks vendors (together with ASML) and mask shops, to get first feedback on the challenges recognized for production tool masks, exploring key parameters that impact overlay and imaging. IMEC has prepared to obtain reticles with an identical layout from multiple mask shops. The present paper gives a snapshot of the available EUV mask infrastructure, with a focus on blank related aspects, in an anonymous way. It is a report of work in progress.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Jonckheere, G. F. Lorusso, A. Goethals, K. Ronse, J. Hermans, and R. De Ruyter "Assessment of EUV reticle blank availability enabling the use of EUV tools today and in the future", Proc. SPIE 6533, 23rd European Mask and Lithography Conference, 653313 (3 May 2007); https://doi.org/10.1117/12.737179
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Cited by 4 scholarly publications and 6 patents.
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KEYWORDS
Photomasks

Reticles

Extreme ultraviolet

Reflectivity

Extreme ultraviolet lithography

Silicon

Multilayers

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