Aerial imaging performance of ALTA4700 printed mask for 130nm design rule

Jyh Wei Hsu; Chun Hung Wu; Kevin Cheng

doi:10.1117/12.736524

3 May 2007 Aerial imaging performance of ALTA4700 printed mask for 130nm design rule

Jyh Wei Hsu, Chun Hung Wu, Kevin Cheng

Proceedings Volume 6533, 23rd European Mask and Lithography Conference; 65331A (2007) https://doi.org/10.1117/12.736524
Event: European Mask and Lithography Conference2007, 2007, Grenoble, France

Abstract

Photomask plays a key role in optical lithography. Laser pattern generators are widely used for photomask manufacturing due to their high throughput. However, corner rounding and line-end shortening degrade pattern fidelity resulting in distorted pattern image s on wafer. ALTA 4700 incorporates a new 0.9 NA, 42X reduction lens that significantly improves resolution and pattern accuracy performance. In this study, three critical line/space 130nm technology device patterns are printed by ALTA4700 laser pattern generator. Input data for these layers was based on existing OPC model generated for e-beam pattern generator. ALTA4700 printed masks have the same aerial image performance compare with e-beam pattern generator.

Citation Download Citation

Jyh Wei Hsu, Chun Hung Wu, and Kevin Cheng "Aerial imaging performance of ALTA4700 printed mask for 130nm design rule", Proc. SPIE 6533, 23rd European Mask and Lithography Conference, 65331A (3 May 2007); https://doi.org/10.1117/12.736524

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