Self-assembled semiconductor quantum dot infrared photodetector operating at room temperature and focal plane array

Ho-Chul Lim; Stanley Tsao; Wei Zhang; Manijeh Razeghi

doi:10.1117/12.719670

14 May 2007 Self-assembled semiconductor quantum dot infrared photodetector operating at room temperature and focal plane array

Ho-Chul Lim, Stanley Tsao, Wei Zhang, Manijeh Razeghi

Author Affiliations +

Proceedings Volume 6542, Infrared Technology and Applications XXXIII; 65420R (2007) https://doi.org/10.1117/12.719670
Event: Defense and Security Symposium, 2007, Orlando, Florida, United States

Abstract

Self-assembled semiconductor quantum dots have attracted much attention because of their novel properties and thus possible practical applications including the lasers, detectors and modulators. Especially the photodetectors which have quantum dots in their active region have been developed and show promising performances such as high operation temperature due to three dimensional confinement of the carriers and normal incidence in contrast to the case of quantum well detectors which require special optical coupling schemes. Here we report our recent results for mid-wavelength infrared quantum dot infrared photodetector grown by low-pressure metalorganic chemical vapor deposition. The material system we have investigated consists of 25 period self-assembled InAs quantum dot layers on InA1As barriers, which are lattice-matched to InP substrates, covered with InGaAs quantum well layers and InA1As barriers. This active region was sandwiched by highly doped InP contact layers. The device operates at 4.1 μm with a peak detectivity of 2.8×10¹¹ cmHz^1/2/W at 120 K and a quantum efficiency of 35 %. The photoresponse can be observed even at room temperature resulting in a peak detectivity of 6×10⁷ cmHz^1/2/W. A 320×256 focal plane array has been fabricated in this kind of device. Its performance will also be discussed here.

Citation Download Citation

Ho-Chul Lim, Stanley Tsao, Wei Zhang, and Manijeh Razeghi "Self-assembled semiconductor quantum dot infrared photodetector operating at room temperature and focal plane array", Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 65420R (14 May 2007); https://doi.org/10.1117/12.719670

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