Paper
31 October 1986 A Four Electrode Electrostatic Lens With Small Chromatic And Spherical Aberrations Used In Submicron Lithography
Gao Jie, Tian Jiahe, Wang Keli, Chang Huayi
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Abstract
A novel four electrode lens system was designed on the basis of axial potential distribution analysis and a new electrostatic lens design guideline. The properties' of the lens are investigated and some general comparisons were made with two and three electrode lenses. It is shown that the four electrode lens is more flexiale and easier to approach the optimized axial potential distribution with simple electrode shapes. With the lens system a 1nA Ga ion beam current in a o.o73-o.o57uM beam spot could be obtained under the following conditions: 14-40Kv acceleration voltage, 4mrad object side acceptance half angle, 20uA/sr angular cur-rent density and 10eV beam energy spread. Experiments were carried out on a focusing ion beam system using the designed four electrode lens and theoretical calculations were confirmed by the experiment results.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gao Jie, Tian Jiahe, Wang Keli, and Chang Huayi "A Four Electrode Electrostatic Lens With Small Chromatic And Spherical Aberrations Used In Submicron Lithography", Proc. SPIE 0655, Optical System Design, Analysis, Production for Advanced Technology Systems, (31 October 1986); https://doi.org/10.1117/12.938451
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KEYWORDS
Electrodes

Lens design

Ion beams

Ions

Gallium

Colorimetry

Monochromatic aberrations

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