Paper
3 May 2007 Method of matrix alignment for nanostructure lithography
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Abstract
Nanoimprint is an emerging lithographic technology that promises high-throughput pattering of nanostructures. Based on the mechanical embossing principle, nanoimprint technique can achieve pattern resolutions beyond the limitations set by the light diffraction or beam scattering in other conventional techniques. The difficulty arises with the exact 900 setting of the mould above the wafer. Proposed is the method of achieving this perpendicularity by the means of the crystallographic properties of Si or GaAs and the matrix made of the above-mentioned materials.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andre Sokolnikov "Method of matrix alignment for nanostructure lithography", Proc. SPIE 6556, Micro (MEMS) and Nanotechnologies for Defense and Security, 65560V (3 May 2007); https://doi.org/10.1117/12.720131
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KEYWORDS
Nanoimprint lithography

Semiconducting wafers

Silicon

Gallium arsenide

Lithography

Optical alignment

Nanotechnology

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