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8 June 2007 Assessing the 1/f noise contributions of accidental defects in advanced semiconductor devices
Gijs Bosman, Derek O. Martin, Shahed Reza
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Proceedings Volume 6600, Noise and Fluctuations in Circuits, Devices, and Materials; 66000A (2007) https://doi.org/10.1117/12.724471
Event: SPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy
Abstract
The effects on the overall device noise of a small number of defects in device sections with a strong transfer impedance coupling to the device terminals is discussed using advanced bulk and silicon-on-insulator n channel MOSFETs and silicon nanowires as examples. From the measured noise and current-voltage data, the precise physical location of the noise centers is determined. Potential noise reduction methods are discussed.
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Gijs Bosman, Derek O. Martin, and Shahed Reza "Assessing the 1/f noise contributions of accidental defects in advanced semiconductor devices", Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000A (8 June 2007); https://doi.org/10.1117/12.724471
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KEYWORDS
Nanowires
Silicon
Oxides
Resistance
Denoising
Electrodes
Bismuth
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