Current and optical low-frequency noise of GaInN/GaN green light emitting diodes

Sergey L. Rumyantsev; Christian Wetzel; Michael S. Shur

doi:10.1117/12.724282

22 June 2007 Current and optical low-frequency noise of GaInN/GaN green light emitting diodes

Sergey L. Rumyantsev, Christian Wetzel, Michael S. Shur

Proceedings Volume 6600, Noise and Fluctuations in Circuits, Devices, and Materials; 66000I (2007) https://doi.org/10.1117/12.724282
Event: SPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy

Abstract

We report on the low-frequency current and light noise in 515 nm green GaInN/GaN quantum well LEDs. The current noise was the superposition of the 1/f and the generation-recombination (GR) noise. The characteristic time of the GR process was found to be proportional to the reciprocal current for the entire current range. This dependence is the characteristic for the monomolecular non-radiative recombination. The dominance of the nonradiative recombination is in agreement with the measured low external quantum efficiency (EQE) <10%. Hence, the noise measurements point out that a low EQE is caused by the low internal quantum efficiency and not by an inefficient light extraction. The noise spectra of light intensity fluctuations were close to the 1/f noise and correlated with the LED quantum efficiency and with the recombination current. Higher noise corresponded to a smaller quantum efficiency and to a higher non-radiative recombination current. The relative spectral noise densities of the light intensity fluctuations within the LED spectral line increase with the wavelength decrease. Fluctuations at different wavelengths are found to be correlated.

Citation Download Citation

Sergey L. Rumyantsev, Christian Wetzel, and Michael S. Shur "Current and optical low-frequency noise of GaInN/GaN green light emitting diodes", Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000I (22 June 2007); https://doi.org/10.1117/12.724282

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