Influence of beam incidence angle on laser cleaning of surface particles

Su-xia Hou; Ji-jun Luo; Qing-hua Zhang; Jin Ma

doi:10.1117/12.790719

22 February 2008 Influence of beam incidence angle on laser cleaning of surface particles

Su-xia Hou, Ji-jun Luo, Qing-hua Zhang, Jin Ma

Proceedings Volume 6622, International Symposium on Photoelectronic Detection and Imaging 2007: Laser, Ultraviolet, and Terahertz Technology; 662204 (2008) https://doi.org/10.1117/12.790719
Event: International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, 2007, Beijing, China

Abstract

Laser cleaning technology has great advantages. The influence of beam incidence angle was studied in the case of the removal weakly absorbing particles on absorbing particles on absorbing Si wafers by 248 nm DUV light pulse. By decreasing the beam incidence angle from 80° to 10°, the removal efficiency of 0.15-0.30 µm Si₃N₄ particles was increased by 30-45%, while no improvement was observed with 0.3 μm SiO₂ particles. Theoretical calculations show that decreasing the incidence angle from 80° to 10° results in a 30-fold increase of the horizontal component of the radiation pressure force, whereas the vertical component remains unchanged as the beam width must be decreased to keep a constant fluence at the workpiece. This force would help removing particles by making them roll. Based on theoretical calculations, it is proposed that the enhanced removal of particles at grazing incidence is caused by the horizontal component of the beam radiation pressure. The difference between Si₃N₄ and SiO₂ particles is attributed to the influence of particle shape on van der Waals adhesion forces: the adhesion force of irregularly shaped Si₃N₄ particles would be comparable to the horizontal component of the radiation pressure force, whereas the adhesion force of spherical SiO₂ particles would be higher.

Citation Download Citation

Su-xia Hou, Ji-jun Luo, Qing-hua Zhang, and Jin Ma "Influence of beam incidence angle on laser cleaning of surface particles", Proc. SPIE 6622, International Symposium on Photoelectronic Detection and Imaging 2007: Laser, Ultraviolet, and Terahertz Technology, 662204 (22 February 2008); https://doi.org/10.1117/12.790719

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KEYWORDS

Particles

Silicon

Semiconducting wafers

Absorption

Grazing incidence

Laser applications

Deep ultraviolet

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