Organic thin-film transistors using suspended source/drain electrode structure

Yong Uk Lee; Yong-Hoon Kim; Jeong-In Han; Min-Koo Han

doi:10.1117/12.739028

13 September 2007 Organic thin-film transistors using suspended source/drain electrode structure

Yong Uk Lee, Yong-Hoon Kim, Jeong-In Han, Min-Koo Han

Proceedings Volume 6658, Organic Field-Effect Transistors VI; 66581F (2007) https://doi.org/10.1117/12.739028
Event: Photonic Devices + Applications, 2007, San Diego, California, United States

Abstract

The electrical properties of triisopropylsilyl (TIPS) pentacene organic thin-film transistors (OTFTs) such as field-effect mobility, on/off ratio, threshold voltage and subthreshold slope were markedly improved by employing suspended source/drain (SSD) electrode structure. The SSD structure was fabricated by using Cr/Au double layer where Cr was used as a sacrificial layer. Using the SSD structure, the field-effect mobility in the linear region increases from 0.007 cm²/Vs to 0.29 cm²/Vs, on/off ratio from 10⁴ to 10⁷, threshold voltage decreases from +9 V to -3 V and subthreshold slope decreases from 4.5 V/decade to 0.6 V/decade.

Citation Download Citation

Yong Uk Lee, Yong-Hoon Kim, Jeong-In Han, and Min-Koo Han "Organic thin-film transistors using suspended source/drain electrode structure", Proc. SPIE 6658, Organic Field-Effect Transistors VI, 66581F (13 September 2007); https://doi.org/10.1117/12.739028

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