Investigation of material properties for zincblende AlGaN alloys applied in UV LEDs

Bo-Ting Liou; Chieh-I Liu; Yen-Kuang Kuo

doi:10.1117/12.733631

14 September 2007 Investigation of material properties for zincblende AlGaN alloys applied in UV LEDs

Bo-Ting Liou, Chieh-I Liu, Yen-Kuang Kuo

Proceedings Volume 6669, Seventh International Conference on Solid State Lighting; 66691H (2007) https://doi.org/10.1117/12.733631
Event: Optical Engineering + Applications, 2007, San Diego, California, United States

Abstract

The material properties of zincblende Al_xGa_1-xN alloys from first-principles calculations are investigated. It is found that the bulk moduli of zincblende Al_xGa_1-xN increase with an increase of aluminum composition x, but the pressure derivative of bulk modulus decreases with an increase of aluminum composition x. The bulk modulus of 199.82 ± 0.64 GPa for GaN increases to that of 213.03 ± 1.09 GPa for AlN, and the deviation parameter of bulk modulus for zincblende Al_xGa_1-xN is 11.18 ± 3.61 GPa. The pressure derivative of bulk modulus of 4.190 ± 0.020 for GaN decreases to that of 3.589 ± 0.030 for AlN. The refractive indices in the wavelength range of 300-600 nm are also investigated. The one-Sellmeier-term expression is used for curve-fitting analysis of the refractive index as a function of the wavelength in the transparent region, and the results should provide for the design and growth of vertical cavity structures and distributed Bragg reflectors on GaAs substrates. Finally, the direct bowing parameter of 0.446 ± 0.126 eV and indirect bowing parameter of -0.360 ± 0.242 eV are obtained. There is a direct-indirect crossover near x = 0.654 for which the band gap energy is 4.573 eV.

Citation Download Citation

Bo-Ting Liou, Chieh-I Liu, and Yen-Kuang Kuo "Investigation of material properties for zincblende AlGaN alloys applied in UV LEDs", Proc. SPIE 6669, Seventh International Conference on Solid State Lighting, 66691H (14 September 2007); https://doi.org/10.1117/12.733631

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