Paper
28 November 2007 Simulation and fabrication of monolithically integrated MSM/PHEMT 850 nm optical receiver front end
Chao Fan, Tang-Sheng Chen, Shi-Long Jiao, Lin Liu, Zhen-Long Chen, Yu-Lin Wang, Yun-Feng Wu, Yu-Tang Ye
Author Affiliations +
Proceedings Volume 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems; 67241M (2007) https://doi.org/10.1117/12.782902
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
An 850 nm monolithically integrated optical receiver front end has been simulated by ATLAS and developed based on 0.5 μm GaAs PHEMT process, which comprises a metal-semiconductor-metal (MSM) photodetector and a distributed amplifier.The output eye diagrams for 2.5 Gb/s and 5Gb/s NRZ pseudorandom binary sequence are attained. Compared to the characteristics of actual device, this contribution details a simulation strategy for accurate prediction of the unilluminated performances of the devices.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chao Fan, Tang-Sheng Chen, Shi-Long Jiao, Lin Liu, Zhen-Long Chen, Yu-Lin Wang, Yun-Feng Wu, and Yu-Tang Ye "Simulation and fabrication of monolithically integrated MSM/PHEMT 850 nm optical receiver front end", Proc. SPIE 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 67241M (28 November 2007); https://doi.org/10.1117/12.782902
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KEYWORDS
Receivers

Integrated optics

Photonic integrated circuits

Gallium arsenide

Capacitance

Device simulation

Photodetectors

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