Paper
11 September 2007 Structure and optical properties of pulsed-laser-deposited AlN thin films for optoelectronic applications
S. Bakalova, A. Szekeres, A. Cziraki, S. Grigorescu, G. Socol, E. Axente, I. N. Mihailescu
Author Affiliations +
Proceedings Volume 6785, ROMOPTO 2006: Eighth Conference on Optics; 67850H (2007) https://doi.org/10.1117/12.756820
Event: ROMOPTO 2006: Eighth Conference on Optics, 2006, Sibiu, Romania
Abstract
The structure and optical properties of AlN thin films synthesized at 800°C by Pulsed Laser Deposition were studied in terms of ambient nitrogen pressure (10-4-10 Pa) and post-deposition cooling rate (5-25°C/min). X-ray diffraction patterns showed the films were polycrystalline with predominantly cubic phase and small-sized crystallites. The refractive index and oscillator energies values were also characteristic of the polycrystalline AlN with cubic structure.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Bakalova, A. Szekeres, A. Cziraki, S. Grigorescu, G. Socol, E. Axente, and I. N. Mihailescu "Structure and optical properties of pulsed-laser-deposited AlN thin films for optoelectronic applications", Proc. SPIE 6785, ROMOPTO 2006: Eighth Conference on Optics, 67850H (11 September 2007); https://doi.org/10.1117/12.756820
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KEYWORDS
Aluminum nitride

Protactinium

Crystals

Nitrogen

Refractive index

Optical properties

Oscillators

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