The design and simulation of same Si-based device used as both LED and PD

Xiaoyun Li; Wei Wang; Pingjuan Niu; Weilian Guo; Hongwei Liu; Guanghua Yang; Xin Yu

doi:10.1117/12.759565

8 January 2008 The design and simulation of same Si-based device used as both LED and PD

Xiaoyun Li, Wei Wang, Pingjuan Niu, Weilian Guo, Hongwei Liu, Guanghua Yang, Xin Yu

Proceedings Volume 6838, Optoelectronic Devices and Integration II; 683826 (2008) https://doi.org/10.1117/12.759565
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

A kind of new light emitting diode (LED) based on Si p-n junction forward injection mechanism completely compatible with standard Si-CMOS technology is designed and analyzed, which has higher efficiency than LED based on Si pn junction in reverse bias breakdown mode. At same time according to reversibility of optoelectronic conversion, the same Si-LED can be used as a photodetector (PD). The photoelectric characteristics of this device as both LED and PD are simulated by the commercial software SILVACO. This device is expected to have wide application in next generation optoelectronic integrated circuit (OEIC).

Citation Download Citation

Xiaoyun Li, Wei Wang, Pingjuan Niu, Weilian Guo, Hongwei Liu, Guanghua Yang, and Xin Yu "The design and simulation of same Si-based device used as both LED and PD", Proc. SPIE 6838, Optoelectronic Devices and Integration II, 683826 (8 January 2008); https://doi.org/10.1117/12.759565

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