Improvement in UV Responsivity of Thin Film Zn3P2 Under Vacuum Surface Operation

S. Hava; N. S. Kopeika

doi:10.1117/12.936543

10 December 1986 Improvement in UV Responsivity of Thin Film Zn₃P₂ Under Vacuum Surface Operation

S. Hava, N. S. Kopeika

Proceedings Volume 0687, Ultraviolet Technology; (1986) https://doi.org/10.1117/12.936543
Event: 30th Annual Technical Symposium, 1986, San Diego, United States

Abstract

Measurement of photoconductivity spectral response over the wavelength range of 220 to 950 nm, linearity with intensity over the optical power range of 10 nW to 4 μW, characteristics, response time, and CV curves were made on Zn3P2 thin-film samples. The results include slow response time (on the crder of a few seconds), maximum photoconductivity response at 400 nm wavelength, and non-linear characteristics. Changes in device characteristics, due to vacuum operation and heat treatment, indicate that surface effects and intergrain boundaries can play important roles in determining the properties of thin film Zn₃P₂, primarily as regards the surface conductivity and a depletion layer which penetrates into the bulk material.

Citation Download Citation

S. Hava and N. S. Kopeika "Improvement in UV Responsivity of Thin Film Zn₃P₂ Under Vacuum Surface Operation", Proc. SPIE 0687, Ultraviolet Technology, (10 December 1986); https://doi.org/10.1117/12.936543

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