Spinplasmonics: controlling plasmons at the quantum level

A. Y. Elezzabi; C. Baron; Mark Johnson

doi:10.1117/12.753438

14 February 2008 Spinplasmonics: controlling plasmons at the quantum level

A. Y. Elezzabi, C. Baron, Mark Johnson

Proceedings Volume 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII; 68920R (2008) https://doi.org/10.1117/12.753438
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

We describe a new mechanism for ultrafast active control of plasmon propagation. By using time-domain terahertz spectroscopy, we demonstrate that electron spin state can influence plasmon propagation. Using a random spinplasmonic medium consisting of a dense ensemble of bimetallic ferromagnetic (F)/nonmagnetic (N) microparticles, plasmon propagation velocity, amplitude attenuation, phase retardation and magnetic field dependence are shown to be influenced by electron spin accumulation in the nonmagnetic layers. The observation of electron spin accumulation is attributed to the formation of a nonequilibrium spin-dependent potential barrier at the F/N interface that acts to resist the flow of a spin-polarized plasmon current. This phenomenon is similar to the electrically-driven spin accumulation phenomenon resulting from current transport between F/N layers. With this first demonstration of the merger between the plasmonics and spintronics fields, we envision the realization of a new class of ultrafast spinplasmonic devices having unique functionalities.

Citation Download Citation

A. Y. Elezzabi, C. Baron, and Mark Johnson "Spinplasmonics: controlling plasmons at the quantum level", Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 68920R (14 February 2008); https://doi.org/10.1117/12.753438

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