AlN/GaN-superlattice structures for the fabrication of intersubband detectors in the telecom wavelength range

Daniel Hofstetter; Esther Baumann; Fabrizio R. Giorgetta; Manfred Maier; Fabien Guillot; Edith Bellet-Amalric; Eva Monroy

doi:10.1117/12.762123

28 February 2008 AlN/GaN-superlattice structures for the fabrication of intersubband detectors in the telecom wavelength range

Daniel Hofstetter, Esther Baumann, Fabrizio R. Giorgetta, Manfred Maier, Fabien Guillot, Edith Bellet-Amalric, Eva Monroy

Author Affiliations +

Proceedings Volume 6894, Gallium Nitride Materials and Devices III; 68940S (2008) https://doi.org/10.1117/12.762123
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

We report on the fabrication and characterization of GaN/AlN based superlattice structures with intersubband transition wavelengths in the optical telecom range. The devices consist typically of 40 periods of 1.5 nm thick Si-doped GaN wells and up to 15 nm thick AlN barriers. The photovoltaic mode of operation has allowed us to test these detectors at room temperature and for frequencies ranging into the multiple GHz region. Substantial performance improvements are expected if proper high frequency mounting and processing techniques will be used in the future.

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Daniel Hofstetter, Esther Baumann, Fabrizio R. Giorgetta, Manfred Maier, Fabien Guillot, Edith Bellet-Amalric, and Eva Monroy "AlN/GaN-superlattice structures for the fabrication of intersubband detectors in the telecom wavelength range", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68940S (28 February 2008); https://doi.org/10.1117/12.762123

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