AlGaN/SiC heterojunction bipolar transistor

Ya. I. Alivov; Q. Fan; X. Ni; S. Chevtchenko; I. B. Bhat; H. Morkoç

doi:10.1117/12.763143

15 February 2008 AlGaN/SiC heterojunction bipolar transistor

Ya. I. Alivov, Q. Fan, X. Ni, S. Chevtchenko, I. B. Bhat, H. Morkoç

Proceedings Volume 6894, Gallium Nitride Materials and Devices III; 68941W (2008) https://doi.org/10.1117/12.763143
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

AlGaN/6H-SiC heterojunction bipolar transistors (HBTs) were fabricated, and the device performance as well as the electrical properties of the n-AlGaN/p-SiC heterojunction were studied by temperature dependent current-voltage characterization. Current gain β=I_C/I_B calculated from I-V characteristics varied from sample to sample in the range of 75-100. A barrier height of 1.1 eV is derived from the Arrhenius plot and its origin is discussed.

Citation Download Citation

Ya. I. Alivov, Q. Fan, X. Ni, S. Chevtchenko, I. B. Bhat, and H. Morkoç "AlGaN/SiC heterojunction bipolar transistor", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941W (15 February 2008); https://doi.org/10.1117/12.763143

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