Abnormal PL spectrum in InGaN MQW surface emitting cavity

J. T. Chu; Y.-J. Cheng; H. C. Kuo; T. C. Lu; S. C. Wang

doi:10.1117/12.762869

29 January 2008 Abnormal PL spectrum in InGaN MQW surface emitting cavity

J. T. Chu, Y.-J. Cheng, H. C. Kuo, T. C. Lu, S. C. Wang

Proceedings Volume 6908, Vertical-Cavity Surface-Emitting Lasers XII; 69080L (2008) https://doi.org/10.1117/12.762869
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

We report the observation of an abnormal photoluminescent (PL) spectrum from a HeCd laser pumped InGaN multiple quantum well (MQW) vertical cavity. The device is fabricated using standard MOCVD deposition on a (0001)-oriented sapphire substrate. The layer structures are: 10nm nucleation layer, a 4um bulk GaN layer, InGaN MQWs, and a final 200nm GaN cap layer. The InGaN MQWs consist of 10 pairs of 5 nm GaN barrier and 3 nm In_0.1Ga_0.9N well. The peak emission of the as-grown MQWs sample was ~420nm. A dielectric distributed Bragg reflectors (DBR) were then coated on the top layer, followed by a laser lift off from sapphire substrate, and subsequently another DBR coated on the bulk GaN bottom surface. The cavity has a quality factor of ~520 from 400-490nm. The device was pumped by a focused CW HeCd laser from the bulk GaN side. When the laser is focused onto the InGaN MQWs, a photoluminescent spectrum centered at the designed MQW wavelength was observed as expected. However, when the focused position was moved toward the bulk GaN region, an additional abnormal PL peak around 460nm was observed. This is far outside the designed MQW wavelength.

Citation Download Citation

J. T. Chu, Y.-J. Cheng, H. C. Kuo, T. C. Lu, and S. C. Wang "Abnormal PL spectrum in InGaN MQW surface emitting cavity", Proc. SPIE 6908, Vertical-Cavity Surface-Emitting Lasers XII, 69080L (29 January 2008); https://doi.org/10.1117/12.762869

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