High performance 1.3 µm GaInNAs quantum well lasers on GaAs

S. M. Wang; G. Adolfsson; H. Zhao; Y. Q. Wei; J. S. Gustavsson; M. Sadeghi; A. Larsson

doi:10.1117/12.766357

29 January 2008 High performance 1.3 μm GaInNAs quantum well lasers on GaAs

S. M. Wang, G. Adolfsson, H. Zhao, Y. Q. Wei, J. S. Gustavsson, M. Sadeghi, A. Larsson

Proceedings Volume 6909, Novel In-Plane Semiconductor Lasers VII; 690905 (2008) https://doi.org/10.1117/12.766357
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

We present state-of-the-art performance of 1.3 μm GaInNAs lasers on GaAs grown by molecular beam epitaxy. The lowest achieved threshold current density is 297, 150 and 133 A/cm² per quantum well (QW) for single, double and triple QW broad area lasers with a cavity length of 1 mm. The characteristic temperature is 93-133 K in the ambient temperature range of 10-80 °C for broad area lasers depending on the cavity length, and increases to 163-208 K for ridge waveguide lasers as a result of temperature insensitive lateral carrier diffusion in QWs. The maximum 3 dB bandwidth of 17 GHz is achieved in a double QW laser. Uncooled 10 Gb/s operation up to 110 °C has been demonstrated.

Citation Download Citation

S. M. Wang, G. Adolfsson, H. Zhao, Y. Q. Wei, J. S. Gustavsson, M. Sadeghi, and A. Larsson "High performance 1.3 μm GaInNAs quantum well lasers on GaAs", Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 690905 (29 January 2008); https://doi.org/10.1117/12.766357

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