Paper
7 March 2008 Extreme mask corrections: technology and benefits
Yuri Granik, Nick Cobb, Dmitry Medvedev
Author Affiliations +
Abstract
We establish criteria to recognize extreme OPC corrections and discuss their difference from the traditional corrections. Then we present new proximity correction methods for rigorous bi- and tri- tone mask optimization that cast problem as a constraint minimization over the space of piecewise constant or continuous functions. The primary optimization objective is stated as a contour integral over the target. The constraints on image amplitude form convex functionals for dark areas and non-convex functionals for bright areas. A Lagrangian of this constrained problem is minimized. This delivers extreme, aggressive mask corrections, which are not confined by the fragmentation schema or the orientation of its sites. We analyze performance of these corrections under challenging process conditions and evaluate fidelity benefits.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuri Granik, Nick Cobb, and Dmitry Medvedev "Extreme mask corrections: technology and benefits", Proc. SPIE 6924, Optical Microlithography XXI, 69243W (7 March 2008); https://doi.org/10.1117/12.771784
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CITATIONS
Cited by 11 scholarly publications.
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KEYWORDS
Photomasks

Optical proximity correction

Printing

Binary data

Point spread functions

Semiconducting wafers

SRAF

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