Design considerations for SiGe-based near infrared imaging sensor

Ashok K. Sood; Robert A. Richwine; Yash R. Puri; Oluwamuyiwa O. Olubuyide; Nicole DiLello; Judy L. Hoyt; Tayo I. Akinwande; Raymond S. Balcerak; Stuart Horn; Thomas G. Bramhall; Daniel J. Radack

doi:10.1117/12.780768

15 May 2008 Design considerations for SiGe-based near infrared imaging sensor

Ashok K. Sood, Robert A. Richwine, Yash R. Puri, Oluwamuyiwa O. Olubuyide, Nicole DiLello, Judy L. Hoyt, Tayo I. Akinwande, Raymond S. Balcerak, Stuart Horn, Thomas G. Bramhall, Daniel J. Radack

Author Affiliations +

Proceedings Volume 6940, Infrared Technology and Applications XXXIV; 69400M (2008) https://doi.org/10.1117/12.780768
Event: SPIE Defense and Security Symposium, 2008, Orlando, Florida, United States

Abstract

Low cost IR Sensors are needed for a variety of Military and Commercial Applications. SiGe based IR Focal Plane Arrays offer a low cost alternative for developing near IR sensors that will not require cooling and can operate in the visible and NIR bands. The attractive features of SiGe based IRFPA's will take advantage of Silicon based technology, that promises small feature size and compatibility with the low power silicon CMOS circuits for signal processing. A feasibility study of an infrared sensor based on SiGe material system and its performance characteristics are presented. Simulations comparing the sensitivity of the SiGe detector with spectral cutoff wavelength of 1.6 micron to other IR Focal Plane arrays are discussed. Measured electrical and optical characteristics of Ge-on-Si photodetectors are also presented.

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Ashok K. Sood, Robert A. Richwine, Yash R. Puri, Oluwamuyiwa O. Olubuyide, Nicole DiLello, Judy L. Hoyt, Tayo I. Akinwande, Raymond S. Balcerak, Stuart Horn, Thomas G. Bramhall, and Daniel J. Radack "Design considerations for SiGe-based near infrared imaging sensor", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69400M (15 May 2008); https://doi.org/10.1117/12.780768

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