Characterization of radio frequency sputtered SixGe1-xOy thin films for uncooled micro-bolometer

Q. Cheng; M. Almasri

doi:10.1117/12.777909

16 April 2008 Characterization of radio frequency sputtered Si_xGe_1-xO_y thin films for uncooled micro-bolometer

Q. Cheng, M. Almasri

Proceedings Volume 6940, Infrared Technology and Applications XXXIV; 694011 (2008) https://doi.org/10.1117/12.777909
Event: SPIE Defense and Security Symposium, 2008, Orlando, Florida, United States

Abstract

Thin film Si_xGe_1-xO_y were deposited on glass, silicon and SiO₂ by RF magnetron sputtering using co-sputtering of silicon and germanium targets in an environment of oxygen and argon. Silicon percentage was varied from ~7% to 22%. Exact contents of each material were determined by XRD/EDS and electrical properties of amorphous compound were studied. High values of temperature coefficient of resistance were obtained in specific conditions. the highest achieved TCR at room temperature was (5.8%/K) using Si_0.177Ge_0.726O_0.097 (film deposited at 400 °C). The measured resistivity on this sample was 14.6 Ω cm.

Citation Download Citation

Q. Cheng and M. Almasri "Characterization of radio frequency sputtered Si_xGe_1-xO_y thin films for uncooled micro-bolometer", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 694011 (16 April 2008); https://doi.org/10.1117/12.777909

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available