Crystallization of manganese cobalt nickelate films prepared by chemical deposition

Yujian Ge; Zhiming Huang; Yun Hou; Tianxin Li; Junhao Chu

doi:10.1117/12.792120

11 March 2008 Crystallization of manganese cobalt nickelate films prepared by chemical deposition

Yujian Ge, Zhiming Huang, Yun Hou, Tianxin Li, Junhao Chu

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842G (2008) https://doi.org/10.1117/12.792120
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

Manganese cobalt nickelate films (Mn_xCo_yNi_3-x-y)O₄ (MCN) are successfully prepared by chemical deposition method at a crystallization temperature of 600°C, which is greatly reduced from the traditional sintered temperature of ~1050 - 1200°C. From the XRD and AFM, we find the grain size of the MCN films increases from 20 to 60 nm with the annealing temperature increase from 600°C to 900°C.

Citation Download Citation

Yujian Ge, Zhiming Huang, Yun Hou, Tianxin Li, and Junhao Chu "Crystallization of manganese cobalt nickelate films prepared by chemical deposition", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842G (11 March 2008); https://doi.org/10.1117/12.792120

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