BiCMOS phototransistors

Artur Marchlewski; Horst Zimmermann

doi:10.1117/12.760388

26 April 2008 BiCMOS phototransistors

Artur Marchlewski, Horst Zimmermann

Proceedings Volume 7003, Optical Sensors 2008; 70030J (2008) https://doi.org/10.1117/12.760388
Event: SPIE Photonics Europe, 2008, Strasbourg, France

Abstract

In this work we present experimental results of silicon-only bipolar phototransistors fabricated in a 0.35μm commercial BiCMOS technology without process modifications. The transistors are characterized over a wide optical spectral range at 410nm, 675nm, 785nm, and 850nm, providing significantly improved -3dB bandwidths up to 390MHz @ 410nm light and responsivities of 1.76A/W @ 675nm corresponding to quantum efficiencies of 359% normalized in terms of the quantum efficiency of a silicon photodiode.

Citation Download Citation

Artur Marchlewski and Horst Zimmermann "BiCMOS phototransistors", Proc. SPIE 7003, Optical Sensors 2008, 70030J (26 April 2008); https://doi.org/10.1117/12.760388

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