Molecular-beam epitaxy of ultrathin Si films on sapphire

P. A. Shilyaev; D. A. Pavlov; E. V. Korotkov; M. V. Treushnikov

doi:10.1117/12.802423

29 April 2008 Molecular-beam epitaxy of ultrathin Si films on sapphire

P. A. Shilyaev, D. A. Pavlov, E. V. Korotkov, M. V. Treushnikov

Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70250W (2008) https://doi.org/10.1117/12.802423
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation

Abstract

Molecular-beam (MBE) epitaxy of silicon on sapphire (1 1 02) was studied by growing films from 30 nm up to 1 mkm thick in ultra-high vacuum (10^-7 Torr). The substrate temperature during deposition was 450-750°C. Before deposition the high-temperature (~1400°C) substrate annealing procedure was performed. The growth rate was ~2.5-5Å/s. Surface morphology was studied by means of atomic-force microscopy (AFM), structure of the films was controlled by reflection of high energy electrons (RHEED). Formation of the three-dimensional islands (clusters) of two types (square shape and hemispherical) was observed. The "square" clusters appeared mostly under low growth temperatures (450-600°C). The hemispherical clusters had the larger sizes and were observed under long deposition times and high growth temperatures. The minimal thickness of continuous Si film was about 32 with 2.0 nm surface roughness. The electron diffraction patterns contained spots, what proved the single-crystal structure of the Si layer.

Citation Download Citation

P. A. Shilyaev, D. A. Pavlov, E. V. Korotkov, and M. V. Treushnikov "Molecular-beam epitaxy of ultrathin Si films on sapphire", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250W (29 April 2008); https://doi.org/10.1117/12.802423

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