The new approach in the determination of the dependency of surface charge density on semiconductor surface potential based voltage: capacity analysis of the depletion region of MIS-structures

G. V. Chucheva; A. G. Zhdan

doi:10.1117/12.802478

29 April 2008 The new approach in the determination of the dependency of surface charge density on semiconductor surface potential based voltage: capacity analysis of the depletion region of MIS-structures

G. V. Chucheva, A. G. Zhdan

Author Affiliations +

Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 702515 (2008) https://doi.org/10.1117/12.802478
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation

Abstract

The analysis algorithm of quasistatic C-V-characteristics of MIS-structures in the range of the depletion of the semiconductor surface of main carriers of the charge are developed. This algorithm provides the quantitative determination of a concentration of doping impurity, the <<flat bands>> voltage and efficient values of a capacity and a thickness of a gate insulator. On this data, obtained within the framework of the single experiment on the Al-SiO₂-(100) n-Si MOS-structure, dependencies of ψ_s(V_g),Q_s[ψ_s(V_g)] and V_i(V_g) (where ψ_s and Q_s - a surface potential and a density of the surface charge in n-Si, V_g - a gate potential, V_i - a voltage drop on an oxide) are reduced. These dependencies without any a priori information about the state of the electronic gas under the strong accumulation or deep inversion are found. Experimental curves of ψ_s(V_g) and Q_s[ψ_s(V_g)] are possible considered as the criterion of the correct of the theory of the semiconductor space charge region, take into account electron gas degeneration and quantum confinement effects, as observed maximum layered densities of electrons and holes exceed 10¹³cm^-2. The dependency of V_i(V_g) necessary to use under investigations of the conductivity through gate insulators, particularly, in cases their small and ultrasmall of the thickness, when the leakage current is defined basically by the tunnel effect.

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G. V. Chucheva and A. G. Zhdan "The new approach in the determination of the dependency of surface charge density on semiconductor surface potential based voltage: capacity analysis of the depletion region of MIS-structures", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702515 (29 April 2008); https://doi.org/10.1117/12.802478

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KEYWORDS

Semiconductors

Oxides

Electronics

Algorithm development

Cesium

Silicon

Doping

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