Crystal quality analysis and improvement using x-ray topography

J. A. Maj; K. Goetze; A. T. Macrander; Y. C. Zhong; X. R. Huang; L. Maj

doi:10.1117/12.797859

3 September 2008 Crystal quality analysis and improvement using x-ray topography

J. A. Maj, K. Goetze, A. T. Macrander, Y. C. Zhong, X. R. Huang, L. Maj

Proceedings Volume 7077, Advances in X-Ray/EUV Optics and Components III; 70771L (2008) https://doi.org/10.1117/12.797859
Event: Optical Engineering + Applications, 2008, San Diego, California, United States

Abstract

The Topography X-ray Laboratory of the Advanced Photon Source (APS) at Argonne National Laboratory operates as a collaborative effort with APS users to produce high performance crystals for APS X-ray beamline experiments. For many years the topography laboratory has worked closely with an on-site optics shop to help ensure the production of crystals with the highest quality, most stress-free surface finish possible. It has been instrumental in evaluating and refining methods used to produce high quality crystals. Topographical analysis has shown to be an effective method to quantify and determine the distribution of stresses, to help identify methods that would mitigate the stresses and improve the Rocking curve, and to create CCD images of the crystal. This paper describes the topography process and offers methods for reducing crystal stresses in order to substantially improve the crystal optics.

Citation Download Citation

J. A. Maj, K. Goetze, A. T. Macrander, Y. C. Zhong, X. R. Huang, and L. Maj "Crystal quality analysis and improvement using x-ray topography", Proc. SPIE 7077, Advances in X-Ray/EUV Optics and Components III, 70771L (3 September 2008); https://doi.org/10.1117/12.797859

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