Paper
18 November 2008 Inductively coupled plasma etching of In1-x-yAlxGayAs in BCl3/Cl2/Ar
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Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71353I (2008) https://doi.org/10.1117/12.803196
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
Abstract
In this paper, dry etching of In0.8Al0.2As/In0.8Ga0.2As/In1-xAlxAs (In1-x-yAlxGayAs) epitaxy material was studied in BCl3/Cl2/Ar inductively coupled plasma (ICP). Etching behavior was characterized by varying the BCl3/Cl2/Ar mixing ratio, ICP power or DC-bias. The results indicate that, in Cl2 dominant condition, smooth surfaces are achieved with mean etch rate exceeding 2 μm/min. As the ratio of BCl3 increasing, the etch rates decrease monotonously and the surfaces becomes rougher because of low volatility InClx etch product. ICP power influences the etch rates, and the etch rates increase monotonously with DC-bias. The result is useful for the fabrication of extended long-wavelength response optoelectronic InGaAs devices.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jinhua Ning, Kefeng Zhang, Hengjing Tang, Yang Wang, Xue Li, and Hai-mei Gong "Inductively coupled plasma etching of In1-x-yAlxGayAs in BCl3/Cl2/Ar", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71353I (18 November 2008); https://doi.org/10.1117/12.803196
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KEYWORDS
Etching

Chlorine

Ions

Plasma

Plasma etching

Indium gallium arsenide

Anisotropic etching

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