Pulse-LDA-pumped passively Q-switched Nd:YVO4 laser with GaAs as saturable absorber

Xiaojuan Liu; Shenggui Fu

doi:10.1117/12.803419

18 November 2008 Pulse-LDA-pumped passively Q-switched Nd:YVO₄ laser with GaAs as saturable absorber

Xiaojuan Liu, Shenggui Fu

Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71353W (2008) https://doi.org/10.1117/12.803419
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China

Abstract

A passively Q-switched pulse-LDA (laser diode array)-pumped Nd:YVO₄ laser using As⁺ implanted GaAs as the saturable absorber is demonstrated. In the experiment, a Q-switching pulse width 7ns with a pulse energy 23.5μJ is achieved which, to our knowledge, is the shortest pulse width in a passively Q-switched Nd:YVO₄ laser using GaAs as saturable absorber. The laser emits only one Q-switching pulse during each pump-pulse time with a Q-switching efficiency of 26.8%. We also investigate the characteristics of the Q-switched pulse by adjusting the pumping pulse energy, pulse width and pulse repetition rate respectively. The experimental results are discussed as well in the paper.

Citation Download Citation

Xiaojuan Liu and Shenggui Fu "Pulse-LDA-pumped passively Q-switched Nd:YVO₄ laser with GaAs as saturable absorber", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71353W (18 November 2008); https://doi.org/10.1117/12.803419

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