Correction for surface charge induced beam displacement in large area sub-45 nm patterning with FIB lithography

Max Chung; Hung-Yi Lin; Jen-Hui Tsai

doi:10.1117/12.803835

4 December 2008 Correction for surface charge induced beam displacement in large area sub-45 nm patterning with FIB lithography

Max Chung, Hung-Yi Lin, Jen-Hui Tsai

Author Affiliations +

Proceedings Volume 7140, Lithography Asia 2008; 71403D (2008) https://doi.org/10.1117/12.803835
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan

Abstract

Focused Ion Beam (FIB) lithography not only can produce features on photoresist, it can also be used to manufacture mold for Nanoimprint. FIB provides fast results with a well focused minimum 7 nm diameter Ga₊ ion beam, and making mold for Nanoimprint with FIB immunes oneself from photoresist issues involved in sub-45 nm large area patterning. However, due to surface charge accumulation, large area patterning often results in displaced and overlapped patterns, similar to e-beam lithography. This displacement occurs in area as small as 5 µm², and is a function of beam dwell time and ion current dose. A small dwell time can lessen this displacement to certain degree if the pattern is small, but fails when the area to be pattern is large. In this paper we present a correct scheme in which the ion beam is check periodically against a pre-drilled mark for beam displacement, and made adjustment in beam control correspondently. In this manner, a large area (10 µm²) pattern of 50 nm squares is successfully demonstrated on a Si wafer.

Citation Download Citation

Max Chung, Hung-Yi Lin, and Jen-Hui Tsai "Correction for surface charge induced beam displacement in large area sub-45 nm patterning with FIB lithography", Proc. SPIE 7140, Lithography Asia 2008, 71403D (4 December 2008); https://doi.org/10.1117/12.803835

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