Paper
27 February 2009 Power scaling of ytterbium INNOSLAB amplifiers beyond 100W average power
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Abstract
The Innoslab design, already established for neodymium doped laser materials, was applied to ytterbium doped laser materials. Recent progresses in brightness of high power diode lasers facilitate efficient pumping of quasi-three-level laser materials. A compact diode-pumped Yb:YAG Innoslab fs-oscillator-amplifier system, scalable to the kilowatt range, was realized. Nearly transform and diffraction limited 682 fs pulses at 400W average output power and 76 MHz repetition rate at room temperature and without using CPA technique have been achieved so far.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Rußbüldt, Hans-Dieter Hoffmann, and Torsten G. Mans "Power scaling of ytterbium INNOSLAB amplifiers beyond 100W average power", Proc. SPIE 7193, Solid State Lasers XVIII: Technology and Devices, 71930K (27 February 2009); https://doi.org/10.1117/12.812816
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Optical amplifiers

Semiconductor lasers

Laser crystals

Ytterbium

Crystals

Doping

Amplifiers

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