Industrial applications of high-average power high-peak power nanosecond pulse duration Nd:YAG lasers

Paul M. Harrison; Samir Ellwi

doi:10.1117/12.814857

27 February 2009 Industrial applications of high-average power high-peak power nanosecond pulse duration Nd:YAG lasers

Paul M. Harrison, Samir Ellwi

Proceedings Volume 7193, Solid State Lasers XVIII: Technology and Devices; 71932A (2009) https://doi.org/10.1117/12.814857
Event: SPIE LASE: Lasers and Applications in Science and Engineering, 2009, San Jose, California, United States

Abstract

Within the vast range of laser materials processing applications, every type of successful commercial laser has been driven by a major industrial process. For high average power, high peak power, nanosecond pulse duration Nd:YAG DPSS lasers, the enabling process is high speed surface engineering. This includes applications such as thin film patterning and selective coating removal in markets such as the flat panel displays (FPD), solar and automotive industries. Applications such as these tend to require working spots that have uniform intensity distribution using specific shapes and dimensions, so a range of innovative beam delivery systems have been developed that convert the gaussian beam shape produced by the laser into a range of rectangular and/or shaped spots, as required by demands of each project. In this paper the authors will discuss the key parameters of this type of laser and examine why they are important for high speed surface engineering projects, and how they affect the underlying laser-material interaction and the removal mechanism. Several case studies will be considered in the FPD and solar markets, exploring the close link between the application, the key laser characteristics and the beam delivery system that link these together.

Citation Download Citation

Paul M. Harrison and Samir Ellwi "Industrial applications of high-average power high-peak power nanosecond pulse duration Nd:YAG lasers", Proc. SPIE 7193, Solid State Lasers XVIII: Technology and Devices, 71932A (27 February 2009); https://doi.org/10.1117/12.814857

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