GaN/AlGaN intersubband optoelectronic devices at telecommunication wavelengths

François H. Julien; Maria Tchernycheva; Eva Monroy

doi:10.1117/12.820380

26 January 2009 GaN/AlGaN intersubband optoelectronic devices at telecommunication wavelengths

François H. Julien, Maria Tchernycheva, Eva Monroy

Proceedings Volume 7222, Quantum Sensing and Nanophotonic Devices VI; 72220J (2009) https://doi.org/10.1117/12.820380
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

This paper reviews the recent progress towards III-nitride intersubband devices based on either quantum wells or quantum dots. We first discuss the specific features of electron confinement in ultrathin GaN/AlN layers Recent achievements on fast electro-optical modulator devices are described. We then discuss a new concept of III-nitride quantum well detectors based on the quantum cascade scheme, which opens prospects for very fast devices. We finally review the progress towards light-emitting devices and saturable absorbers based on GaN/AlN quantum dots.

Citation Download Citation

François H. Julien, Maria Tchernycheva, and Eva Monroy "GaN/AlGaN intersubband optoelectronic devices at telecommunication wavelengths", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220J (26 January 2009); https://doi.org/10.1117/12.820380

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