Paper
26 January 2009 A novel opto-electro-mechanical photon sensor
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Abstract
We present theoretical and experimental results for a novel photon detector based on a strong opto-electro-mechanical effect. In this new architecture, photo-generated carriers are compresses under a suspended nano-injector to produce significant electrostatic pressure. The pressure results in a reduced gap between the nano-injector and the semiconductor, which in turn increases the tunnel based electron injection dramatically. Our experimental results show very good sensitivity at 1.55 μm at room temperature. We also show that Casimir force has a considerable effect on the device performance, due to the small gap between nano-injector and semiconductor.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Mohseni, J. Kohoutek, and O. G. Memis "A novel opto-electro-mechanical photon sensor", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220S (26 January 2009); https://doi.org/10.1117/12.814673
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KEYWORDS
Photodetectors

Sensors

Atomic force microscopy

Semiconductors

Calibration

Indium gallium arsenide

Temperature metrology

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