Paper
26 January 2009 The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier
Darin Hoffman, Binh-Minh Nguyen, Edward Kwei-wei Huang, Pierre-Yves Delaunay, Simeon Bogdanov, Paritosh Manurkar, Manijeh Razeghi, Vaidya Nathan
Author Affiliations +
Abstract
The Type-II InAs/GaSb superlattice photon detector is an attractive alternative to HgCdTe photodiodes and QWIPS. The use of p+ - π - M - N+ heterodiode allows for greater flexibility in enhancing the device performance. The utilization of the Empirical Tight Binding method gives the band structure of the InAs/GaSb superlattice and the new M- structure (InAs/GaSb/AlSb/GaSb) superlattice allowing for the band alignment between the binary superlattice and the M- superlattice to be determined and see how it affects the optical performance. Then by modifying the doping level of the M- superlattice an optimal level can be determined to achieve high detectivity, by simultaneously improving both photo-response and reducing dark current for devices with cutoffs greater than 14.5 μm.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Darin Hoffman, Binh-Minh Nguyen, Edward Kwei-wei Huang, Pierre-Yves Delaunay, Simeon Bogdanov, Paritosh Manurkar, Manijeh Razeghi, and Vaidya Nathan "The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 722215 (26 January 2009); https://doi.org/10.1117/12.810033
Lens.org Logo
CITATIONS
Cited by 5 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Quantum efficiency

Superlattices

Stereolithography

Long wavelength infrared

Binary data

Diodes

Gallium antimonide

Back to Top