The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier

Darin Hoffman; Binh-Minh Nguyen; Edward Kwei-wei Huang; Pierre-Yves Delaunay; Simeon Bogdanov; Paritosh Manurkar; Manijeh Razeghi; Vaidya Nathan

doi:10.1117/12.810033

26 January 2009 The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier

Darin Hoffman, Binh-Minh Nguyen, Edward Kwei-wei Huang, Pierre-Yves Delaunay, Simeon Bogdanov, Paritosh Manurkar, Manijeh Razeghi, Vaidya Nathan

Author Affiliations +

Proceedings Volume 7222, Quantum Sensing and Nanophotonic Devices VI; 722215 (2009) https://doi.org/10.1117/12.810033
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

The Type-II InAs/GaSb superlattice photon detector is an attractive alternative to HgCdTe photodiodes and QWIPS. The use of p⁺ - π - M - N⁺ heterodiode allows for greater flexibility in enhancing the device performance. The utilization of the Empirical Tight Binding method gives the band structure of the InAs/GaSb superlattice and the new M- structure (InAs/GaSb/AlSb/GaSb) superlattice allowing for the band alignment between the binary superlattice and the M- superlattice to be determined and see how it affects the optical performance. Then by modifying the doping level of the M- superlattice an optimal level can be determined to achieve high detectivity, by simultaneously improving both photo-response and reducing dark current for devices with cutoffs greater than 14.5 μm.

Citation Download Citation

Darin Hoffman, Binh-Minh Nguyen, Edward Kwei-wei Huang, Pierre-Yves Delaunay, Simeon Bogdanov, Paritosh Manurkar, Manijeh Razeghi, and Vaidya Nathan "The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 722215 (26 January 2009); https://doi.org/10.1117/12.810033

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