QD VCSELs with InAs/InGaAs short period superlattice QW injector

V. Tokranov; M. Yakimov; S. Oktyabrsky

doi:10.1117/12.809570

18 February 2009 QD VCSELs with InAs/InGaAs short period superlattice QW injector

V. Tokranov, M. Yakimov, S. Oktyabrsky

Author Affiliations +

Proceedings Volume 7224, Quantum Dots, Particles, and Nanoclusters VI; 72240T (2009) https://doi.org/10.1117/12.809570
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Structures with tunnel-coupled pairs consisting of InGaAs quantum wells (QWs) grown on top of self-assembled InAs quantum dots (QDs) were used previously as a gain medium for vertical cavity surface emitting lasers (VCSELs) to eliminate problems with QD-limited maximum saturated gain. Conventional molecular beam epitaxy of tunnel-coupled QDs with slow InAs growth rate and InGaAs solid solution QW injector with high InAs growth rate required a long delay in growth process for changing indium source temperature/flux. This leads to non-intentional doping of tunnel barrier and reproducibility issues. To overcome these problems, structures of tunnel-coupled QDs-QW pairs consisting of InAs/InGaAs short period superlattice (SPSL) QW injector with compatible slow InAs growth rate (QDs-SPSL) were developed and compared with traditional InAs-InGaAs (QDs-InGaAs). Photoluminescence (PL) and electroluminescence were used to study the properties of the "well-on-dots" active medium with InAs/InGaAs SPSL QW and with InGaAs QW. The optimized tunnel triple pair QDs-SPSL structure with 2x reduction of growth time has demonstrated a 2x enhanced PL efficiency as compared with traditional QDs-InGaAs structures. A novel tunnel-coupled triple QDs InAs-SPSL was successfully employed as a gain medium of VCSELs with doped all-epitaxial distributed Bragg reflectors (DBRs). Room temperature CW lasing wavelengths in the range from 1100 nm to 1150 nm were measured in VCSELs with attuned DBRs. These QDs-SPSL VCSELs demonstrated minimum threshold current value I_th = 0.85 mA and maximum differential efficiency of 0.16 W/A.

Citation Download Citation

V. Tokranov, M. Yakimov, and S. Oktyabrsky "QD VCSELs with InAs/InGaAs short period superlattice QW injector", Proc. SPIE 7224, Quantum Dots, Particles, and Nanoclusters VI, 72240T (18 February 2009); https://doi.org/10.1117/12.809570

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Quantum wells

Vertical cavity surface emitting lasers

Solids

Indium gallium arsenide

Indium arsenide

Superlattices

Oxides

Show All Keywords

Keywords/Phrases

Search In:

Publication Years