Paper
6 February 2009 Angular spectrum tailoring in solid immersion microscopy
S. B. Ippolito, P. Song, D. L. Miles, J. D. Sylvestri
Author Affiliations +
Abstract
We present a technique that involves tailoring the angular spectrum in optical microscopy of silicon integrated circuits, with a solid immersion lens. Spatial light modulation to select only supercritical light at the substrate/dielectric interface, yields only evanescent and scattered light in the interconnect layers. We demonstrated the technique in optical excitation microscopy of 65nm silicon-on-insulator circuits, which enabled localization of a fault during microprocessor development. Acquiring images with and without angular spectrum tailoring allowed longitudinal localization of the electrical response to optical excitation. Lateral registration of electrical response and confocal reflection images to the circuit layout was also significantly improved.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. B. Ippolito, P. Song, D. L. Miles, and J. D. Sylvestri "Angular spectrum tailoring in solid immersion microscopy", Proc. SPIE 7227, Complex Light and Optical Forces III, 722708 (6 February 2009); https://doi.org/10.1117/12.806545
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KEYWORDS
Microscopy

Transistors

Confocal microscopy

Silicon

Solids

Optical microscopy

Dielectrics

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