EUV-patterning characterization using a 3D mask simulation and field EUV scanner

Jun-Taek Park; Yoon-Suk Hyun; Chang-Moon Lim; Tae-Seung Eom; Sunyoung Koo; Sarohan Park; Suk-Kyun Kim; Keun-Do Ban; Hyun-Jo Yang; Chang-Il Oh; Byung-Ho M. Nam; Chang-Reol Kim; HyeongSoo Kim; Seung-Chan Moon; Sungki Park

doi:10.1117/12.814407

17 March 2009 EUV-patterning characterization using a 3D mask simulation and field EUV scanner

Jun-Taek Park, Yoon-Suk Hyun, Chang-Moon Lim, Tae-Seung Eom, Sunyoung Koo, Sarohan Park, Suk-Kyun Kim, Keun-Do Ban, Hyun-Jo Yang, Chang-Il Oh, Byung-Ho M. Nam, Chang-Reol Kim, HyeongSoo Kim, Seung-Chan Moon, Sungki Park

Author Affiliations +

Proceedings Volume 7271, Alternative Lithographic Technologies; 72711G (2009) https://doi.org/10.1117/12.814407
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

In the field of lithography technology, EUV lithography can be a leading candidate for sub-30 nm technology node. EUVL expose system has different characteristics compared to DUV exposure system. EUV source wavelength is short and no material is transparent to the source. So off-axis reflective optic system is used for patterning in place of on-axis refractive system of DUV system. And different reticle design is needed that consists of 40 pair of Mo/Si multi layer and absorber layer in place of conventional mask. Because of the oblique incidence on the mask, shadowing effect is occurred such as pattern asymmetry, shift and pattern bias depending on pattern orientation. For non-telecentric characteristics of EUV scanner, shadowing effect produces CD variation versus field position[1][2]. Besides, it is well known that EUV scanner has bigger flare than conventional DUV scanner. Therefore, the correction of mask shadowing effect and flare level are one of the important issues for EUV lithography. In this paper, process window and MEF of EUV lithography has been examined by 3D mask simulation. CD variation by shadowing is simulated for various pattern orientations. A shadowing correction method has been calculated due to field position to reduce shadowing effect. And the correction effect is examined by simulation and Experimental results. Principle of radial overlay shift due to field position is verified then the shift length of line and space pattern is calculated.

Citation Download Citation

Jun-Taek Park, Yoon-Suk Hyun, Chang-Moon Lim, Tae-Seung Eom, Sunyoung Koo, Sarohan Park, Suk-Kyun Kim, Keun-Do Ban, Hyun-Jo Yang, Chang-Il Oh, Byung-Ho M. Nam, Chang-Reol Kim, HyeongSoo Kim, Seung-Chan Moon, and Sungki Park "EUV-patterning characterization using a 3D mask simulation and field EUV scanner", Proc. SPIE 7271, Alternative Lithographic Technologies, 72711G (17 March 2009); https://doi.org/10.1117/12.814407

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