Paper
17 March 2009 Development status of Canon's full-field EUVL tool
Takayuki Hasegawa, Shigeyuki Uzawa, Tokuyuki Honda, Yoshinari Higaki, Akira Miyake, Hideki Morishima
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Abstract
EUVL is the most promising candidate of 32 nm generations and beyond. In this paper, we present Canon's development status of EUVL technologies. The system design of the EUV full field high volume manufacturing tool (VS2) is under way. The specification of VS2 is presented in this paper. The fabrication of six-aspheric-mirror prototype projection optics (PO1) of NA 0.3 has been started. The PO1 is fabricated to evaluate and improve our technologies of polishing and measuring the figure of mirrors. We present some results of the figuring accuracy of the mirror. EUVL will be required to resolve sub-twenty nm L&S patterns. We are studying off-axis illumination technologies and high- NA technologies. The simulation results of the resolution capability and the DOF are presented.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takayuki Hasegawa, Shigeyuki Uzawa, Tokuyuki Honda, Yoshinari Higaki, Akira Miyake, and Hideki Morishima "Development status of Canon's full-field EUVL tool", Proc. SPIE 7271, Alternative Lithographic Technologies, 72711Y (17 March 2009); https://doi.org/10.1117/12.813465
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Cited by 1 scholarly publication.
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KEYWORDS
Carbon

Extreme ultraviolet

Extreme ultraviolet lithography

Mirrors

Nanoimprint lithography

Protactinium

Critical dimension metrology

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