EUV resist processing in vacuum

Koji Kaneyama; Shinji Kobayashi; Toshiro Itani

doi:10.1117/12.813365

1 April 2009 EUV resist processing in vacuum

Koji Kaneyama, Shinji Kobayashi, Toshiro Itani

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72731Q (2009) https://doi.org/10.1117/12.813365
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

In extreme ultraviolet (EUV) lithography, exposures are and can only be performed in vacuum (<1x10^-5 Pa). At present though, conventional resist processing technologies before and after exposure (coating, post application bake, post exposure bake, etc.) are performed in atmospheric pressures. Investigations on the possibility of a EUV-specialized resist processing system; specifically, the development of a 300mm wafer compatible, vacuum-based resist baking and cooling system is presented. Comparative evaluations with conventional atmospheric-based systems were made from the viewpoint of resist lithographic performance (sensitivity, resolution, line width roughness) and resist outgassing rate. As a result, an improvement in LWR was also observed in vacuum post application bake and post exposure bake. However, a difference in resist lithographic performance depending on the type of resist material used was observed between resist processes performed in-atmosphere and in-vacuum. Lastly, the vacuum based bake process was found to have no significant effect on resist outgassing rate released.

Citation Download Citation

Koji Kaneyama, Shinji Kobayashi, and Toshiro Itani "EUV resist processing in vacuum", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731Q (1 April 2009); https://doi.org/10.1117/12.813365

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KEYWORDS

Photoresist processing

Lithography

Extreme ultraviolet lithography

Line width roughness

Extreme ultraviolet

Scanning electron microscopy

Semiconducting wafers

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