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16 March 2009 Exploration of linear and non-linear double exposure techniques by simulation
John S. Petersen, Robert T. Greenway, Tim Fühner, Peter Evanschitzky, Feng Shao, Andreas Erdmann
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Proceedings Volume 7274, Optical Microlithography XXII; 72741V (2009) https://doi.org/10.1117/12.814411
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States
Abstract
In this work, a framework for the assessment of different double exposure techniques is laid out. Both the simulation environment and the utilized models, derived from well-established resist models, are discussed. Numerous simulation results are evaluated to investigate strengths and weaknesses of different double exposure approaches. Non-linear superposition techniques are examined in respect of their process performance for both standard and sub 0.25 k1 values. In addition to a study of these effects in the scope of basic layouts, an application to interference-assisted lithography (IAL) is proposed and discussed.
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John S. Petersen, Robert T. Greenway, Tim Fühner, Peter Evanschitzky, Feng Shao, and Andreas Erdmann "Exploration of linear and non-linear double exposure techniques by simulation", Proc. SPIE 7274, Optical Microlithography XXII, 72741V (16 March 2009); https://doi.org/10.1117/12.814411
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KEYWORDS
Remote sensing
Double patterning technology
Current controlled current source
Lithography
Optical lithography
Superposition
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