Character of Nd:GdVO4 laser operating at 1.34 &#956;m with low Nd3+ doped concentrations

Rui Zhou; Shuangchen Ruan; Chenli Du; Jianquan Yao

doi:10.1117/12.821156

18 February 2009 Character of Nd:GdVO₄ laser operating at 1.34 μm with low Nd³⁺ doped concentrations

Rui Zhou, Shuangchen Ruan, Chenli Du, Jianquan Yao

Proceedings Volume 7276, Photonics and Optoelectronics Meetings (POEM) 2008: Laser Technology and Applications; 72760S (2009) https://doi.org/10.1117/12.821156
Event: Photonics and Optoelectronics Meetings, 2008, Wuhan, China

Abstract

Three Nd:GdVO₄ crystals with Nd³⁺doped concentrations of 0.1, 0.2 and 0.3 at% were involved in the experiment. Their laser characteristics at 1.34 μm were experimentally tested with a diode-end-pumped configuration and a simple plane-parallel cavity. Maximum output powers of 7.3 W, 8.35 and 9.47 W were achieved, respectively. The thermal stress resistances of these crystals were calculated according to the experimental data.

Citation Download Citation

Rui Zhou, Shuangchen Ruan, Chenli Du, and Jianquan Yao "Character of Nd:GdVO₄ laser operating at 1.34 μm with low Nd³⁺ doped concentrations", Proc. SPIE 7276, Photonics and Optoelectronics Meetings (POEM) 2008: Laser Technology and Applications, 72760S (18 February 2009); https://doi.org/10.1117/12.821156

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