Paper
6 May 2009 Morphology issues of HgCdTe samples grown by MOCVD
P. Madejczyk, A. Piotrowski, W. Gawron, K. Klos, A. Rogalski, J. Rutkowski
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Abstract
Experimental results concerned morphology improvement of HgCdTe layers grown by MOCVD on GaAs substrates are presented. Selected growth parameters on morphology state have been discussed. The substrate issues like its quality and crystallographic orientation as well as misorientation play considerable role in final layer smoothness. We study HgCdTe layer thickness on its surface roughness. The MBE/MOCVD combination method had been adopted for CdTe buffer layer deposition. Extensive characterization studies using accessible equipment and methods: atomic force microscopy (AFM), secondary electron microscopy (SEM), laser scatterometer and Nomarski microscopy have provided invaluable information about the connection between defect formation and the influence of specific growth parameters.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Madejczyk, A. Piotrowski, W. Gawron, K. Klos, A. Rogalski, and J. Rutkowski "Morphology issues of HgCdTe samples grown by MOCVD", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 729825 (6 May 2009); https://doi.org/10.1117/12.823938
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Cited by 6 scholarly publications.
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KEYWORDS
Mercury cadmium telluride

Gallium arsenide

Metalorganic chemical vapor deposition

Surface roughness

Mercury

Heterojunctions

Crystals

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