Paper
24 August 2009 Effects of thermal oxidation interfacial layer on the photoelectrical properties of GaN-based Schottky diodes
Kai-hui Chu, Chao Li, Yong-gang Yuan, Xiang-yang Li
Author Affiliations +
Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 738123 (2009) https://doi.org/10.1117/12.836284
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China
Abstract
Thermal oxidation interfacial layer was inserted into the GaN-based material and Schottky contact interface during the device preparation to increase the barrier height. Different thickness of thermal oxidation interfacial layer was created by keeping the chips in the Rapid Thermal Processor (RTP) in atmosphere ambient for different periods of time before evaporating transparent Schottky contact. For GaN Schottky diodes, as the time kept in RTP increases, the diodes' zero-bias resistances decrease and the dark current increase considerably, and the peak photoresponse and UV-visible rejection factor of the responsivity of the diodes decrease abruptly. For Al0.45Ga0.55N Schottky diodes, as the time increase, the diodes' zero-bias resistances and dark current increase slightly, while the peak photoresponse and the UV/visible rejection factor of the responsivity of the diodes decrease a little.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kai-hui Chu, Chao Li, Yong-gang Yuan, and Xiang-yang Li "Effects of thermal oxidation interfacial layer on the photoelectrical properties of GaN-based Schottky diodes", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 738123 (24 August 2009); https://doi.org/10.1117/12.836284
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KEYWORDS
Diodes

Gallium nitride

Thermal oxidation

Thermal effects

Semiconductors

Lithium

Metals

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