Paper
24 August 2009 Study on the performance of GaAs photoconductive semiconductor switches
Yuan Xie, Wei Liu, Tian Lan, Guo-yong Ma, Tian-shuai Guan
Author Affiliations +
Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 73812B (2009) https://doi.org/10.1117/12.836351
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China
Abstract
The GaAs photoconductive semiconductor switch is an important device in the measurement of the signal of ultra high-speed. In this paper, the transmission model of transient signals on GaAs PCSS is given. Based on the testing result of delay-time-modulation method, the relationship between signal amplitude and the form of connection mode is analyzed and discussed. The conclusion is that the pulse width of output transient signal is decided by the width of laser pulse and the carrier life and the key point of getting the transient signal is the coupling of capacity.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuan Xie, Wei Liu, Tian Lan, Guo-yong Ma, and Tian-shuai Guan "Study on the performance of GaAs photoconductive semiconductor switches", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73812B (24 August 2009); https://doi.org/10.1117/12.836351
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KEYWORDS
Gallium arsenide

Switches

Semiconductors

Pulsed laser operation

Picosecond phenomena

Scanning tunneling microscopy

Signal detection

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