The electrical properties and defect levels of Al doped CdZnTe crystal for detector applications

Wanqi Jie; Gangqiang Zha

doi:10.1117/12.835264

4 August 2009 The electrical properties and defect levels of Al doped CdZnTe crystal for detector applications

Wanqi Jie, Gangqiang Zha

Proceedings Volume 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications; 73850U (2009) https://doi.org/10.1117/12.835264
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

CdZnTe (CZT) is one of the most promising materials for room-temperature X-ray and Gamma-ray detectors. The electrical properties of CZT crystal decide the performance of CZT detector to a large degree. For high quality CZT crystal using as detector, both high resistivity and high carrier transport properties are necessary. In this paper, the electrical properties and defect levels of Al-doped CZT (CZT:Al) crystal were discussed. Utilizing the thermally stimulated current (TSC) spectroscope measurement, the defect levels in CZT:Al crystal and their level-model were determined and inferred. The carrier transport properties of the CZT:Al were charactered with the carrier mobility-lifetime (μτ) products determined by the peak channel of²⁴¹Am alpha particle 5.48 MeV spectrum as a function of the bias voltage. Fitted by the single carrier Hecht equation, the μτ for the electron was evaluated to be 4.6×10^-4 cm²·V^-1.

Citation Download Citation

Wanqi Jie and Gangqiang Zha "The electrical properties and defect levels of Al doped CdZnTe crystal for detector applications", Proc. SPIE 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications, 73850U (4 August 2009); https://doi.org/10.1117/12.835264

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