New material systems for third generation infrared detectors

A. Rogalski

doi:10.1117/12.852524

31 December 2009 New material systems for third generation infrared detectors

A. Rogalski

Proceedings Volume 7388, Ninth International Conference on Correlation Optics; 73880J (2009) https://doi.org/10.1117/12.852524
Event: Correlation Optics 2009, 2009, Chernivsti, Ukraine

Abstract

Third-generation infrared (IR) systems are being developed nowadays. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well IR photoconductors (QWIPs), are included. Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs). In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.

Citation Download Citation

A. Rogalski "New material systems for third generation infrared detectors", Proc. SPIE 7388, Ninth International Conference on Correlation Optics, 73880J (31 December 2009); https://doi.org/10.1117/12.852524

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