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We report on the room temperature photoluminescence (PL) at 1.54 μm from erbium-doped silicon rich silicon oxide
(ErSRSO) films, fabricated on fused quartz by thermal evaporation followed by thermal-annealing in air. PL
measurements show maximum intensity in samples annealed at 1000°C for four hours. X-ray diffraction (XRD)
structural analyses show that annealing caused the formation of active Er3+ (Er2O3) centers. XRD and PL results show
that increasing Er2O3 concentration does not necessarily lead to an increase in photoluminescence. Compositional
analysis using Time-of-Flight Secondary Ion Mass Spectroscopy (TOF-SIMS) depth-profiling shows a strong
correlation between the presence of contiguous Si rich regions and Er2O3 centers on the one hand and the observed PL
on the other. The combination of PL, XRD, and TOF-SIMS results indicate the presence of silicon nanoclusters and its
sensitization of erbium.
Hossein Alizadeh,Li Qian,Nazir P. Kherani, andStefan Zukotynski
"Sensitization of erbium in silicon oxide by evaporation and thermal oxidation", Proc. SPIE 7402, Nanoengineering: Fabrication, Properties, Optics, and Devices VI, 74020P (20 August 2009); https://doi.org/10.1117/12.826252
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Hossein Alizadeh, Li Qian, Nazir P. Kherani, Stefan Zukotynski, "Sensitization of erbium in silicon oxide by evaporation and thermal oxidation," Proc. SPIE 7402, Nanoengineering: Fabrication, Properties, Optics, and Devices VI, 74020P (20 August 2009); https://doi.org/10.1117/12.826252