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Tin sulfide (SnS) thin films of different thicknesses were deposited on TCO-coated glass substrates by pulse
electrodeposition. The applied potential pulses were -0.95V (Von) and +0.1V (Voff). Crystal structure of the deposited
films was orthorhombic with lattice parameters similar to that of the mineral herzenbergite. A systematic increase in the
band gap value was observed with increase in the film thickness. The dark conductivities of 60 and 510 nm thick films
were 3.8 x 10-8 Ω cm-1 and 6.72 x10-7 Ω cm-1 respectively. The structural parameters such as lattice constants and grain
size showed a systematic change with film thickness.
Hirian B. M. Anaya,Ildefonso Z. Torres, andNini R. Mathews
"Pulse electrodeposited tin sulfide films for photovoltaic applications", Proc. SPIE 7409, Thin Film Solar Technology, 740914 (20 August 2009); https://doi.org/10.1117/12.826667
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Hirian B. M. Anaya, Ildefonso Z. Torres, Nini R. Mathews, "Pulse electrodeposited tin sulfide films for photovoltaic applications," Proc. SPIE 7409, Thin Film Solar Technology, 740914 (20 August 2009); https://doi.org/10.1117/12.826667